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US 6,618,317 B1Granted
Write system architecture of magnetic memory array divided into a plurality of memory blocks
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsTakaharu Tsuji, Tsukasa Ooishi
Life of this patent
Estimating the term…
Abstract
During data write, a first driver electrically connects a fist shared node to one of first and second voltages in accordance with write data. A second driver electrically connects a second shared node to the other voltage. A plurality of first switch circuits for electrically connecting one end sides of bit lines to the first shared node, respectively, and a plurality of second switch circuits for electrically connecting the other end sides to the second shared node, respectively, are provided. In accordance with a column select result, the first and second switch circuit for the corresponding bit line are turned on. Therefore, it is possible to execute a data write operation without providing a driver for each bit line.
Claims11
A thin film magnetic memory device comprising:
- first to Nth N (where N is a natural number not smaller than 2) memory blocks each having a plurality of memory cells storing magnetically written data arranged in a matrix, and each sharing columns of a plurality of memory cell columns;
- a plurality of bit lines provided to correspond to said plurality of memory cell columns, respectively, and shared among said N memory blocks;
- and
- first to (N+1)th (N+1) write control circuits each arranged alternately with each of said memory blocks using regions adjacent in a row direction to each of said memory blocks, wherein
- each of said (N+1) write control circuits is connected to said plurality of bit lines, and supplies a data write current to a selected bit line of said plurality of bit lines during said data write in accordance with a level of write data, and
- when the Ith memory block of said N memory blocks, where I is a natural number from 1 to N, is selected, each of first to Ith write control circuits electrically connects said selected bit line to one of first and second voltages according to said write data and each of (I+1)th to (N+1)th write control circuits electrically connects said selected bit line among said plurality of bit lines to the other one of said first and second voltages according to said write data.
3 more elements
A thin film magnetic memory device comprising:
- a memory array having a plurality of memory cells, each storing magnetically written data, arranged in a matrix;
- a plurality of bit lines provided to correspond to a plurality of memory cell columns, respectively;
- first and second write control circuits arranged to correspond to both sides of said memory array, respectively, and each supplying a data write current to the selected bit line of said plurality of bit lines during data write, wherein
- said memory array is divided along a row direction into a plurality of block units,
- said thin film magnetic memory device further comprises:
- a plurality of first and second data lines provided to correspond to said plurality of block units, respectively;
- a first address decoder transmitting first and second data signals, complementary to each other in accordance with said write data, to the first and second data lines corresponding to the selected block unit among said plurality of first and second data lines, respectively,
- said first write control circuit includes a plurality of first write control units provided to correspond to said plurality of block units, respectively,
- said second write control circuit includes a plurality of second write control units provided to correspond to said plurality of block units, respectively,
- each of said first write control units has:
- a first driver electrically connecting a first shared node provided for each of said first write control units, to one of said first and second voltages in accordance with said first data signal transmitted to the corresponding first data line during said data write;
- and
- a plurality of first switch circuits each controlling connection between said first shared node and each of bit lines included in the corresponding block unit,
- each of said second write control units has:
- a second driver electrically connecting a second shared node provided for each of said second write control units, to the other one of said first and second voltages in accordance with said second data signal transmitted to the corresponding second data line during said data write;
- and
- a plurality of second switch circuits each controlling connection between said second shared node and each of said bit lines included in the corresponding block unit, and
- said thin film magnetic memory device further comprises a second address decoder for selectively turning on said plurality of first and second switch circuits in accordance with a column select result.
15 more elements
A thin film magnetic memory device comprising:
- a memory array having a plurality of memory cells, each storing magnetically written data, arranged in a matrix, wherein
- said memory array includes a plurality of bit lines provided to correspond to a plurality of memory cell columns, respectively,
- said memory array is divided along a row direction into a plurality of block units, respectively,
- said thin film magnetic memory device further comprises:
- a plurality of data line pairs provided to correspond to said plurality of block units, respectively;
- a plurality of driver units provided to correspond to said plurality of data line pairs, respectively, and each selectively supplying a data write current to corresponding one of said plurality of data line pairs in accordance with a column select result during data write;
- a first connection control circuit provided for each of said data line pairs;
- and
- a second connection control circuit provided for each of said data line pairs,
- each of said data line pairs includes first and second data lines,
- said first connection control circuit includes a plurality of first switch circuits each controlling connection between one end side of each of the bit lines included in the corresponding block unit and the corresponding first data line,
- said second connection control circuit includes a plurality of second switch circuits each controlling connection between the other end side of each of the bit lines included in the corresponding block unit and the corresponding second data line, and
- said thin film magnetic memory device further comprises an address decoder for selectively turning on said plurality of first and second switch circuits in accordance with said column select result.
10 more elements
Dependencies are inferred from the claim text.