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US 6,618,290 B1Granted
Method of programming a non-volatile memory cell using a baking process
AssigneeAdvanced Micro Devices, Inc.
InventorsJanet S. Y. Wang, Narbeh Derhacobian
Life of this patent
Estimating the term…
Abstract
A method of programming that includes programming a fresh memory cell with a substrate that includes a first region and a second region with a channel therebetween and a gate above the channel, and a charge trapping region that contains a first amount of charge. Baking the programmed fresh cell causing a charge loss in the channel while the remaining charge within the channel is distributed more locally at the first region when compared to the distribution of charge prior to the baking.
Claims11
A method of programming comprising:
- programming a fresh memory cell with a substrate that comprises a first region and a second region with a channel therebetween and a gate above said channel, and a charge trapping region that contains a first amount of charge;
- and
- baking said programmed fresh cell causing a charge loss in said channel while the remaining charge within said channel is distributed more locally at said first region when compared to the distribution of charge prior to said baking.
Dependencies are inferred from the claim text.