US 6,617,873 B2 · Semiconductor integrated circuit and testing method thereof

Abstract

The invention provides a semiconductor integrated circuit wherein a PMOS 111 having a high threshold voltage is installed between a VDD line 101 and a VDDV line 103, and a NMOS 121 having a high threshold voltage is installed between a VSS line 102 and a VSSV line 104. The semiconductor integrated circuit includes a logic gate circuit supplied with a power source voltage via the VDDV line 103 and the VSSV line 104, respectively, and made up of PMOSes 131 to 133, and NMOSes 141 to 143. A substrate terminal of the PMOSes 131 to 133, respectively, is connected to a pad 163 to which a suitable voltage can be supplied from outside while a substrate terminal of the NMOSes 141 to 143, respectively, is connected to a pad 164 to which a suitable voltage can be supplied from outside. The semiconductor integrated circuit with such a configuration is capable of improving a failure detection ratio at testing.

Claims11

Dependent claims

A method of testing a semiconductor integrated circuit having an internal logic circuit, the internal logic circuit having a plurality of first transistors each of which has a first threshold voltage and each of which has a substrate terminal, and the internal logic circuit supplied with a first power source voltage through a second transistor having a second threshold voltage which is higher than the first threshold voltage, said method comprising:

supplying a first voltage to a gate of the second transistor so as to turn the second transistor into a conducting state;
supplying a second voltage to the substrate terminals of the first transistors so as to increase a threshold voltage of each of the first transistors;
and
measuring a value of current flowing through the internal logic circuit after said supplying the first and second voltages.

1 more element

A method of testing a semiconductor integrated circuit having a internal logic circuit, the internal logic circuit having a plurality of first transistors and a plurality of second transistors, each of the first transistors having a first threshold voltage and a substrate terminal and each of the second transistors having a second threshold voltage and a substrate terminal, the internal logic circuit supplied with a first power source voltage through a third transistor having a third threshold voltage which is higher than the first threshold voltage and supplying a second power source voltage through a fourth transistor having a fourth threshold voltage which is higher than the second threshold voltage, said method comprising:

supplying a first voltage to a gate of the third transistor and supplying a second voltage to a gate of the fourth transistor so as to turn the third and fourth transistors into a conducting state;
supplying a third voltage to the substrate terminals of the first transistors and supplying a fourth voltage to the substrate terminals of the second transistors so as to increase a threshold voltage of each of the first transistors and to increase a threshold voltage of each of the second transistors;
and
measuring a value of current flowing through the internal logic circuit after the supplying the first, second, third and fourth voltages.

1 more element

Dependencies are inferred from the claim text.

Semiconductor integrated circuit and testing method thereof

Life of this patent

Semiconductor integrated circuit and testing method thereof

Life of this patent

Abstract

Claims11