Film bulk acoustic resonator and method for fabrication thereof
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsKuk Hyun Sunwoo, Hyoung Jun Kim, Jae Wook Jang
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AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsKuk Hyun Sunwoo, Hyoung Jun Kim, Jae Wook Jang
Estimating the term…
The present invention provides a robust FBAR device and a simplified method of fabricating a FBAR device. FBAR device according to the present invention includes a membrane supporting layer between a substrate and a membrane layer, surrounding an air gap region. The membrane supporting layer supports the membrane layer to obtain a robust structure. Firstly, the method forms a sacrificial layer on the substrate, then a photoresist pattern is formed on air gap forming region at a top surface of the sacrificial layer, the method removes the sacrificial layer to form a sacrificial pattern by using the photoresist pattern as an etching mask. An insulating material then deposits on the substrate, the photoresist pattern is remove, and a membrane layer is formed on a top surface of the sacrificial layer and the insulating material layer. Finally, the method removes the sacrificial pattern to form an air gap.
A method for fabricating a film bulk acoustic resonator (FBAR) device having air gap, comprising steps of:
Dependencies are inferred from the claim text.