Thermal performance in flip chip/integral heat spreader packages using low modulus thermal interface material

A method of making a semiconductor die package comprising:

• assembling a semiconductor die and a heat spreader with a thermally conductive gel therebetween;
• and
• curling the gel to form a thermal interface material which has a modulus of elasticity in the range of 1-500 kPa, and wherein the thermal resistance of the cured gel between the semiconductor die and the heat spreader is <1 cm2°C/Watt.

A method of making a semiconductor die package comprising:

• assembling a semiconductor die and a heat spreader with a thermally conductive gel between;
• and
• curing the get to form a thermal Interface material which has a modulus of elasticity in the range of >5 kPa-500 kPa, and wherein the thermal resistance of the cured gel between the semiconductor die and the heat spreader is <1 cm2°C/Watt.

A method of dissipating heat from a semiconductor die package comprising:

• transferring heat from a semiconductor die in a semiconductor die package to a heat spreader in the package with a thermal interface material between the semiconductor die and the heat spreader;
• wherein the thermal interface material is a gel which has a modulus of elasticity in the range of 1-500 kPa, and wherein The thermal resistance of the gel is <1 cm2°C/Watt.

A method of dissipating heat from a semiconductor die package, comprising:

• transferring heat from a semiconductor die in a semiconductor die package to a heal spreader in the package with a thermal interlace material between the semiconductor die and the heat spreader;
• wherein the thermal interface material is a cured crosslinked polymer gel which is filled with material selected from the group consisting of metal and ceramic.