Methods and devices using group III nitride compound semiconductor
AssigneeToyoda Gosei Co., Ltd.
InventorsNorikatsu Koide, Hisaki Kato
Life of this patent
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Abstract
A layer comprising silicon oxide (SiO2) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semiconductor represented by a general formula AlxGayIn1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) is laminated thereon. The group III nitride compound semiconductor represented by a general formula AlxGayIn1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) grows epitaxially on the substrate-exposed regions B which are not covered by the SiO2 layer, and grows epitaxially on the SiO2 layer in lateral direction from the regions B. Consequently, a group III nitride compound semiconductor having no dislocations can be obtained.
Claims5
A group III nitride compound semiconductor, comprising:
- a silicon (Si) substrate;
- a first layer which is formed on and in contact with the (111) plane of said silicon substrate and made of a group III nitride compound semiconductor;
- a second layer which is formed on said first layer such that first layer-exposed portions are formed in a scattered manner and on which a group III nitride compound semiconductor does not grow epitaxially;
- a third layer which grows epitaxially on said first layer-exposed portions, or the regions which are not covered by said second layer, and which grows epitaxially on the regions which are covered by said second layer in a lateral direction,
- wherein said first layer is formed to have two-layer structure, consisting of a layer made of AlxGa1-xN (0<x≦1) and a layer made of a group III nitride compound semiconductor formed on said layer made of AlxGa1-xN (0<x≦1).
Dependencies are inferred from the claim text.