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US 6,617,666 B2Granted
Semiconductor device with capacitor and process for manufacturing the device
AssigneeKabushiki Kaisha Toshiba
InventorsTakashi Yoshitomi, Yuichi Nakashima
Life of this patent
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Abstract
A semiconductor device includes a first insulating film comprising an opening, a capacitor formed at a selected position in the opening, a second insulating film formed at least in the opening, and a third insulating film formed on the second insulating film.
Claims13
A semiconductor device comprising:
- a first insulating film comprising an opening;
- a first layer being formed under the first insulating film and having an exposed surface which is partially exposed at the opening;
- a capacitor formed at a selected position and only on the exposed surface in the opening;
- a second insulating film formed at least in the opening;
- and
- a third insulating film formed on the second insulating film.
3 more elements
A semiconductor device comprising:
- a first insulating film comprising an opening;
- a capacitor formed at a selected position in the opening;
- a second insulating film formed at least in the opening;
- a third insulating film formed on the second insulating film;
- and
- a diffusion preventing film formed under the first insulating film and the capacitor.
3 more elements
A semiconductor device comprising:
- a first insulating film comprising an opening;
- a capacitor formed at a selected position in the opening;
- a second insulating film formed at least in the opening;
- a third insulating film formed on the second insulating film;
- a first diffusion preventing film formed under the first insulating film and the capacitor;
- and
- a second diffusion preventing film formed between the capacitor and the second insulating film.
4 more elements
A semiconductor device comprising:
- a first insulating film comprising an opening;
- a capacitor formed at a selected position in the opening;
- a second insulating film formed at least in the opening;
- and
- a third insulating film formed on the second insulating film,
- wherein the third insulating film is a low dielectric film and the second insulating film comprises a relative dielectric constant higher than the third insulating film.
3 more elements
Dependencies are inferred from the claim text.