Semiconductor device with sidewall spacers and elevated source/drain region
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsToshiyuki Oishi, Kohei Sugihara, Naruhisa Miura, Yuji Abe, Yasunori Tokuda
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Abstract
Source and drain regions include regions of an epitaxial silicon film on the surface of the substrate and regions in the substrate. The depth of junctions of the source and drain regions is identical to or shallower than the depth of junctions of extension regions. As a result, even if the thickness of the side wall layer is reduced, since the depletion layer of the extension regions with lower impurity concentration compared with the source and drain regions is predominant, the short channel effect has a smaller effect.
Claims7
A semiconductor device comprising:
- a gate electrode and a gate insulating film sequentially disposed on a surface of a substrate, the substrate having a first conductivity type;
- side walls on both lateral sides of the gate electrode;
- extension regions having a second conductivity type, located on both sides of the gate electrode;
- in the substrate, and having a junction depth relative to the surface of the substrate;
- and
- source and drain regions including both
- an epitaxial film on the surface of the substrate on both sides of the gate electrode and
- regions having the second conductivity type, located within the substrate, contiguous to the extension regions, extending along interfaces of the epitaxial film and the surface of the substrate, and having a junction depth no deeper than the junction depth of the extension regions.
Dependencies are inferred from the claim text.