High breakdown voltage semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorMasaaki Noda
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Abstract
A high breakdown voltage semiconductor device includes a semiconductor layer, a drain offset diffusion region, a source diffusion region, a drain diffusion region, a buried diffusion region of a first conductivity type that is buried in the drain offset diffusion region, at least one plate electrode in a floating state formed on a field insulating film, and a metal electrode that is formed on an interlayer insulating film positioned on the plate electrode and a part of which is electrically connected to the drain diffusion region and that is capacitively coupled to the plate electrode.
Claims13
A high breakdown voltage semiconductor device comprising:
- a semiconductor layer of a first conductivity type;
- a drain offset diffusion region of a second conductivity type formed in the semiconductor layer of the first conductivity type;
- a source diffusion region of the second conductivity type formed in the semiconductor layer of the first conductivity type apart from the drain offset diffusion region;
- a drain diffusion region of the second conductivity type formed in the drain offset diffusion region;
- a buried diffusion region of the first conductivity type that is buried in the drain offset diffusion region and at least a part of which is electrically connected to the semiconductor layer of the first conductivity type;
- a gate insulating film formed on a portion of the semiconductor layer of the first conductivity type that is positioned between the source diffusion region and the drain offset diffusion region;
- a gate electrode formed on the gate insulating film;
- a field insulating film formed on the drain offset diffusion region;
- at least one plate electrode in a floating state formed on the field insulating film;
- an interlayer insulating film formed on the field insulating film and the at least one plate electrode;
- and
- a metal electrode that is formed on the interlayer insulating film positioned on the at least one plate electrode and a part of which is electrically connected to the drain diffusion region and that is capacitively coupled to the at least one plate electrode.
Dependencies are inferred from the claim text.