Field effect transistor structure for driving inductive loads

A circuit for driving an inductive load, comprising

• a low side field effect transistor having a first source terminal connected to a low side power supply rail and a first drain terminal for connecting to the inductive load, the low side field effect transistor comprising a first body diffusion region having a first source diffusion region therein, the low side field effect transistor further comprising a first metal source contact adjacent the first body diffusion region and the first source diffusion region and corresponding to the first source terminal the first metal source contact forming a first Schottky type contact with the first body diffusion region, the low side field effect transistor further comprising a first additional resistor in parallel with the first Schottky type contact for facilitating a first additional leakage beyond a first Schottky leakage, the first Schottky leakage corresponding to a first equivalent resistance of the first Schottky type contact wherein the first additional resistor comprises a few small ohmic contacts between the first metal source contact and the first body diffusion region;
• and
• a high side field effect transistor having a second source terminal connected to a high side power supply rail and a second drain terminal for connecting to the inductive load, the high side field effect transistor comprising a second body diffusion region having a second source diffusion region therein, the high side field effect transistor further comprising a second metal source contact adjacent the second body diffusion region and the second source diffusion region and corresponding to the second source terminal, the second metal source contact forming a second Schottky type contact with the second body diffusion region, the high side field effect transistor further comprising a second additional resistor in parallel with the second Schottky type contact for facilitating a second additional leakage beyond a second Schottky leakage, the second Schottky leakage corresponding to a second equivalent resistance of the second Schottky type contact, wherein the second additional resistor comprises a few small ohmic contacts between the second metal source contact and the second body diffusion region.

A circuit for driving an inductive load, comprising:

• a low side field effect transistor having a first source terminal connected to a low side power supply rail and a first drain terminal for connecting to the inductive load, the low side field effect transistor comprising a first body diffusion region having a first source diffusion region therein, the low side field effect transistor further comprising a first metal source contact adjacent the first body diffusion region and the first source diffusion region and corresponding to the first source terminal, the first metal source contact forming a first Schottky type contact with the first body diffusion region, the low side field effect transistor further comprising a first additional resistor in parallel with the first Schottky type contact for facilitating a first additional leakage beyond a fist Schottky leakage, the first Schottky leakage corresponding to a first equivalent resistance of the first Schottky type contact, wherein the first additional resistor comprises a few small ohmic contacts between the first metal source contact and the first body diffusion region;
• and
• a high side field effect transistor having a second drain terminal connected to a high side power supply rail and a second source terminal for connecting to the inductive load, the high side field effect transistor comprising a second body diffusion region having a second source diffusion region therein the high side field effect transistor further comprising a second metal source contact adjacent the second body diffusion region and the second source diffusion region and corresponding to the second source terminal, the second metal source contact forming a second Schottky type contact with the second body diffusion region, the high side field effect transistor further comprising a second additional resistor in parallel with the second Schottky type contact for facilitating a second additional leakage beyond a second Schottky leakage, the second Schottky leakage corresponding to a second equivalent resistance of the second Schottky type contact, wherein the second additional resistor comprises a few small ohmic contacts between the second metal source contact and the second body diffusion region.