Field-effect-controllable semiconductor configuration with a laterally extending channel zone

A semiconductor configuration, comprising:

• a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, and an insulation layer, said first connection zone having a first zone with a first dopant concentration and a second zone with a second dopant concentration, said first dopant concentration being higher than said second dopant concentration, and said second zone being formed between said first zone and said channel zone;
• said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;
• said insulation layer surrounding said at least one control electrode;
• said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;
• said semiconductor body defining a vertical direction and a lateral direction;
• and
• said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone.

A semiconductor configuration, comprising:

• a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, and an insulation layer, said first connection zone having a first zone with a first dopant concentration and a second zone with a second dopant concentration, and said second zone completely surrounding said first zone in the lateral direction;
• said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;
• said insulation layer surrounding said at least one control electrode;
• said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;
• said semiconductor body defining a vertical direction and a lateral direction;
• and
• said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone.

A semiconductor configuration, comprising:

• a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, and an insulation layer;
• said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;
• said insulation layer surrounding said at least one control electrode;
• said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;
• said semiconductor body defining a vertical direction and a lateral direction;
• said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone;
• said first connection zone having a first zone with a first dopant concentration and a second zone with a second dopant concentration;
• said second connection zone having a third dopant concentration;
• said channel zone having a fourth dopant concentration;
• and
• said fourth dopant concentration being lower than said first and third dopant concentrations.

A semiconductor configuration, comprising:

• a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, and an insulation layer;
• said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;
• said insulation layer surrounding said at lease one control electrode;
• said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;
• said semiconductor body defining a vertical direction and a lateral direction;
• said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone;
• said semiconductor body having a rear side;
• a layer of the first conductivity type being disposed at said rear side;
• said first connection zone having a first zone with a first dopant concentration and a second zone with a second dopant concentration;
• said layer having a third dopant concentration;
• said third dopant concentration substantially corresponding to said first dopant concentration;
• and said layer being connected to said first connection zone.

A semiconductor configuration, comprising:

• a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, an insulation layer, a further first connection zone, and a further channel zone extending between said further first connection zone and said second connection zone;
• said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;
• said insulation layer surrounding said at least one control electrode;
• said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;
• said semiconductor body defining a vertical direction and a lateral direction;
• said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone;
• and
• said at least one control electrode extending, adjacent to said second connection zone, said channel zone and said further channel zone, from said first connection zone to said further first connection zone.

A semiconductor configuration, comprising:

• a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, and an insulation layer;
• said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;
• said insulation layer surrounding said at least one control electrode;
• said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;
• said semiconductor body defining a vertical direction and a lateral direction;
• said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone;
• said semiconductor body having a front side and a rear side;
• and
• said first connection zone extending, in the vertical direction, from said front side to said rear side of said semiconductor body.

A semiconductor configuration, comprising:

• a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, and an insulation layer;
• said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;
• said insulation layer surrounding said at least one control electrode;
• said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;
• said semiconductor body defining a vertical direction and a lateral direction;
• said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone;
• and
• said semiconductor body having a rear side;
• and
• an electrically conductive layer disposed on said rear side of said semiconductor body for making contact with said first connection zone.

A semiconductor configuration, comprising:

• a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, an insulation layer, and an electrically conductive zone introduced in said first connection zone for making contact with said first connection zone;
• said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;
• said insulation layer surrounding said at least one control electrode;
• said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;
• said semiconductor body defining a vertical direction and a lateral direction;
• and
• said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone.

A semiconductor configuration, comprising:

• a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, an insulation layer, and an electrically conductive zone introduced in said second connection zone for making contact with said second connection zone;
• said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;
• said insulation layer surrounding said at least one control electrode;
• said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;
• said semiconductor body defining a vertical direction and a lateral direction;
• and
• said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second Connection zones, a current path along the lateral direction is formed in the channel zone.