Integrated circuit devices having contact and container structures
AssigneeMicron Technology, Inc.
InventorsKunal R. Parekh, John K. Zahurak
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Abstract
Integrated circuitry fabricated using methods for forming contact structures and container structures, as described herein, are provided. The integrated circuitry formed by the methods of the present invention, for example DRAM structures, provide capacitors in containers having sufficiently high storage capacitance for advanced integrated circuit devices. In addition the methods for forming such container capacitors facilitate the formation of contacts structures and provided for the formation of local interconnect structures and electrical contact to each of the structures formed.
Claims19
A DRAM comprising:
- a semiconductor substrate comprising a first insulative layer over the substrate and a second insulative layer over the first insulative layer, the first insulative layer having a plurality of first contact structures formed in their entirety therein, the first contact structures having a first conductivity type;
- a plurality of third contact structures formed in their entirety within the second insulative layer;
- a capacitor container structure, the container formed in its entirety with the second insulative layer;
- a second contact structure formed in its entirety within the first insulative layer and the second insulative layer, the second contact structure having a second conductivity type opposite the first type;
- a plurality of local interconnect structures overlying the second insulative layer;
- and
- a third insulative layer overlying the second insulative layer and the plurality of local interconnects, the third insulative layer having a plurality of fourth contact structures formed in their entirety therein, each fourth contact structure contacting one of the local interconnect structures, one of the second interconnect structures or the third interconnect structure.
An integrated circuit device comprising:
- a semiconductor substrate comprising a first insulative layer disposed over the substrate, the first insulative layer having a plurality of first contact structures formed in their entirety therein;
- a second insulative layer disposed over the first insulative layer, the second insulative layer having a plurality of third contact structures and at least one capacitor container structure, each third contact structure and the at least one capacitor container structure being formed in its entirety within the second insulative layer;
- at least one second contact structure formed in its entirety within both the first insulative layer and the second insulative layer;
- and
- wherein the first contact structures comprise a conductive material of a first conductivity type, and wherein the at least one second contact structure comprises a conductive material of a second conductivity type, opposite the first conductivity type.
Dependencies are inferred from the claim text.