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US 6,617,630 B2Granted
Resin-encapsulated semiconductor apparatus and process for its fabrication
AssigneeHitachi, Ltd.
InventorsJun Tanaka, Keiko Isoda, Kiyoshi Ogata
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AssigneeHitachi, Ltd.
InventorsJun Tanaka, Keiko Isoda, Kiyoshi Ogata
Estimating the term…
The present invention provides a resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin; the surface-protective film being formed of a polyimide. The present invention also provides a process for fabricating a resin-encapsulated semiconductor apparatus, comprising the steps of forming a film of a polyimide precursor composition on the surface of a semiconductor device having a ferroelectric film; heat-curing the polyimide precursor composition film to form a surface-protective film formed of a polyimide; and encapsulating, with an encapsulant resin, the semiconductor device on which the surface-protective film has been formed. The polyimide may preferably have a glass transition temperature of from 240° C. to 400° C. and a Young's modulus of from 2,600 MPa to 6 GPa. The curing may preferably be carried out at a temperature of from 230° C. to 300° C.
A resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin, wherein
A resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin, wherein
A resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin, wherein
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors:…
Constructional details of devices covered by this subclass: encapsulations or containers
The semiconductor body being only partially enclosed: the encapsulations being directly on the semiconductor body
Characterised by their materials: comprising organic materials, e.g. plastics or resins
Term ended 22 Jan 2018 (estimated)
This application is based on application No. H9-9276 filed in Japan, the content of which is incorporated hereinto by reference.
1. Field of the Invention
This invention relates to a resin-encapsulated semiconductor apparatus having a semiconductor device with a ferroelectric film, and a process for its fabrication.
FIG. 1 is a cross-sectional view of an LOC (lead on chip) type resin-encapsulated semiconductor apparatus.
FIGS. 2A to 2F illustrate an example of a process for fabricating the resin-encapsulated semiconductor apparatus.
FIG. 3 is a cross-sectional view of a resin-encapsulated semiconductor apparatus fabricated in Example 1.
As a polyimide precursor preferable in the present invention, which can obtain the polyimide having a glass transition temperature of from 240° C. to 400° C. and a Young's modulus of from 2,600 MPa to 6 GPa by heat-curing it at 230° C. to 300° C., it may include polyamic acids comprised of a repeating unit represented by the following general formula (I).
wherein R1 is at least one of tetravalent aromatic organic groups shown in the following chemical formula group (II), and R2 is at least one of divalent aromatic organic groups shown in the following chemical formula groups (III) and (IV).
Of these polyamic acids, polyamic acids wherein R1 is at least one of those listed in the following chemical formula group (VII) and R2 is at least one of those listed in the following chemical formula group (VIII) are particularly suited to the present invention.