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AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsJohn J. Drab, David A. Robinson
Estimating the term…
An electrically writeable, optically readable, ferroelectric memory cell for nonvolatilely storing a single bit. The memory cell has an optically polarizeable translucent ferroelectric layer located between first and second translucent metal layers. The metal layers are used to electrically write an optical polarization state into the translucent ferroelectric layer. A translucent insulator layer, wire grid polarizer, a second translucent insulator layer and light sensing diode region are, in turn, attached to the second translucent metal layer. A polarized light beam, from a light source, is shone onto the first translucent metal layer, in order to optically read out the optical polarization state of the translucent ferroelectric layer of the memory cell. Alternately, two such memory cells can be used together in order to store a single bit.
An optically readable ferroelectric memory cell, comprising:
An optically readable ferroelectric memory cell, comprising:
A memory array, the memory array comprising a plurality of optically readable ferroelectric memory cells built into a semiconductor substrate, each optically readable ferroelectric memory cell, comprising:
An optically readable ferroelectric memory cell, comprising:
Dependencies are inferred from the claim text.