US 6,617,625 B2 · Solid state imager

Abstract

A device region surrounded by a device isolation region has a rectangular shape with a width in a direction in which a gate electrode of a transfer gate extends. A signal accumulation region of a photodiode is disposed on the entirety of that portion of the device region, which is located on a source side of the gate electrode of the transfer gate. A detection section having a width in the direction in which the gate electrode extends is disposed on that portion of the device region, which is located on a drain side of the gate electrode of the transfer gate. The size of the detection section is set to be as small as possible. Two edge portions of the detection section, which are located in the direction of extension of the gate electrode, are spaced apart from the device isolation region.

Drawings

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Drawings

Claims14

Dependent claims

A solid state imager comprising:

a semiconductor substrate of a first conductivity type;
first and second impurity regions of a second conductivity type disposed in the semiconductor substrate, the first impurity region receiving a light signal;
an isolation region which surrounds the first and second impurity regions;
and
a gate electrode which extends in one direction in an area between the first and second impurity regions;
wherein at least a portion of edge portions of the second impurity region is spaced apart from the isolation region, and is also spaced apart from a portion located directly under the gate electrode.

3 more elements

Dependencies are inferred from the claim text.

Description6,411 words

Summary1,774 words

#1. Field of the Invention

#The present invention relates to a device structure of a pixel section of a solid state imager.

#2. Description of the Related Art

Brief description of the drawings21 figures

#The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate presently embodiments of the invention, and together with the general description given above and the detailed description of the embodiments given below, serve to explain the principles of the invention.

#FIG. 1 is a circuit diagram showing a pixel of a conventional solid state imager;

#FIG. 2 is a plan view of a conventional solid state imager;

Detailed description4,274 words

#A solid state imager of the present invention will be described below in detail with reference to the accompanying drawings.

#First Embodiment

#FIG. 5 shows a first embodiment of a solid state imager according to the present invention. FIG. 6 is a cross-sectional view taken along line VI—VI in FIG. 5, and FIG. 7 is a cross-sectional view taken along line VII—VII in FIG. 5.

Facts

Application

09/886,993Filed 25 Jun 2001

Priority

JP 2000-19132126 Jun 2000

Published

US 2001/0054713 A127 Dec 2001

Granted

9 Sep 2003

Term ended

25 Jun 2021

Estimated · how

20 years from earliest known nonprovisional domestic filing plus recorded patent term adjustment. Maintenance-fee lapses, terminal disclaimers and statutory extensions have not been checked. The continuity chain may be incomplete; this is not an enforceability determination.

Classification3 codes

H10F 39/803
Constructional details of image sensors: pixels having integrated switching, control, storage or amplification elements
H10F 39/807
Constructional details of image sensors: pixel isolation structures
H10F
Solar cells and light sensors

Solid state imager

Life of this patent

Solid state imager

Life of this patent

Life of this patent

Abstract

Drawings

Drawings

Claims14

Description6,411 words

Drawings

Description6,411 words

Classification3 codes

Life of this patent