Organic thin film transistor with siloxane polymer interface
Assignee3M Innovative Properties Company
InventorsTommie W. Kelley, Larry D. Boardman, Timothy D. Dunbar, Todd D. Jones, Dawn V. Muyres, Mark J. Pellerite, Terrance P. Smith
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Abstract
Provided is an organic thin film transistor comprising a siloxane polymeric layer interposed between a gate dielectric and an organic semiconductor layer. An integrated circuit comprising thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.
Claims31
An organic thin film transistor (OTFT) comprising a substantially nonfluorinated polymeric layer having a thickness less than about 400 Å interposed between a gate dielectric and an organic semiconductor layer, wherein the polymeric layer comprises a polymer having interpolymerized units according to the formula:
- wherein each R comprises, independently, a group selected from hydrogen, C1-C20 aliphatic, C4-C20 alicyclic, arylalkyl, or aryl, and a combination thereof which may contain one or more heteroatom(s) and/or one or more functional group(s).
A method of making an organic thin film transistor comprising:
- a) providing a substrate;
- b) depositing a gate electrode material on the substrate;
- c) depositing a gate dielectric on the gate electrode material;
- d) applying a substantially nonfluorinated siloxane polymeric layer having a thickness less than about 400 Å interposed between a gate dielectric and an organic semiconductor layer, wherein the polymeric layer comprises a polymer having interpolymerized units according to the formula:
- wherein each R comprises, independently, a group selected from hydrogen, C1-C20 aliphatic, C4-C20 alicyclic, arylalkyl, or aryl, and a combination thereof which may contain one or more heteroatom(s) and/or one or more functional group(s);
- e) depositing an organic semiconductor layer adjacent to the polymeric layer;
- and
- f) providing a source electrode and a drain electrode contiguous to the organic semiconductor layer.
Dependencies are inferred from the claim text.