Nitride semiconductor laser device and optical pickup apparatus therewith
AssigneeSharp Kabushiki Kaisha
InventorsShigetoshi Ito, Yuhzoh Tsuda
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Abstract
A nitride semiconductor laser device includes a nitride semiconductor substrate, and a layered portion corresponding to a nitride semiconductor film grown on the nitride semiconductor substrate, the layered portion including an n-type layer and a p-type layer and a light emitting layer posed between the n- and p-type layers, of the n- and p-type layers a layer opposite to the nitride semiconductor substrate with the light emitting layer opposed therebetween serving as an upper layer having a stripe of 1.9 μm to 3.0 μm in width, the light emitting layer and the upper layer having an interface distant from a bottom of the stripe by 0 μm to 0.2 μm.
Claims14
A nitride semiconductor laser device, comprising:
- a nitride semiconductor substrate;
- and
- a layered portion corresponding to a nitride semiconductor film grown on said nitride semiconductor substrate, said layered portion including an n-type layer and a p-type layer and a light emitting layer posed between said n- and p-type layers, of said n- and p-type layers a layer opposite to said nitride semiconductor substrate with said light emitting layer posed therebetween serving as an upper layer having a stripe of 1.9 μm to 2.5 μm in width, said light emitting layer and said upper layer having an interface distant from a bottom of said stripe by 0 μm to 0.2 μm,
- wherein said light emitting layer starts with one of well and barrier layers, followed by said well and barrier layers alternately stacked thereon, and ends with said one of said well and barrier layers to have a multi-layered structure and emitting layer has three wall layers.
A nitride semiconductor laser device, comprising:
- a nitride semiconductor substrate;
- and
- a layered portion corresponding to a nitride semiconductor film grown on said nitride semiconductor substrate, said layered portion including a lower layer and an upper layer and a light emitting layer posed between said lower and upper layers, said upper layer that is farther from said nitride semiconductor substrate with said light emitting layer having a ridge-geometric stripe of 1.9 μm to 2.5 μm in width, said light emitting layer and said upper layer having an interface distant from a bottom of said ridge geometric stripe by 0 μm to 0.2 μm,
- wherein said light emitting layer starts with one of well and barrier layers, followed by said well and barrier layers alternately stacked thereon, and ends with said one of said well and barrier layers to have a multi-layered structure and said light emitting layer has three well layers.
Dependencies are inferred from the claim text.