Method of plasma etching organic antireflective coating
AssigneeLam Research Corporation
InventorsTuqiang Ni, Weinan Jiang, Conan Chiang, Frank Y. Lin, Chris Lee, Dai N. Lee
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Abstract
A semiconductor manufacturing process wherein an organic antireflective coating is etched with an O2-free sulfur containing gas which provides selectivity with respect to an underlying layer and/or minimizes the lateral etch rate of an overlying photoresist to maintain critical dimensions defined by the photoresist. The etchant gas can include SO2 and a carrier gas such as Ar or He and optional additions of other gases such as HBr. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.
Claims20
A method of etching an organic antireflective coating with selectivity to an overlying and/or underlying layer, comprising:
- supporting a semiconductor substrate in a plasma etch reactor, the substrate including an organic antireflective coating over an underlying layer;
- energizing an O2-free etch gas into a plasma state and etching openings in the organic antireflective coating, the etch gas comprising a sulfur-containing gas and a carrier gas.
Dependencies are inferred from the claim text.