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US 6,617,255 B2Granted
Plasma processing method for working the surface of semiconductor devices
AssigneeHitachi, Ltd.
InventorsTakao Arase, Motohiko Yoshigai, Go Saito, Masamichi Sakaguchi, Hiroaki Ishimura, Takahiro Shimomura
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Abstract
A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.
Claims3
A plasma processing method comprising the steps of:
- converting a mixed atmosphere of halogen-containing gas with aluminum into plasma by using a plasma processing apparatus including a vacuum vessel, means for generating said plasma in said vacuum vessel, a sample stage on which a sample having a surface to be processed by said plasma is placed, and a power supply for applying a radio-frequency bias voltage to said sample stage;
- and
- etching a silicon nitride layer on a silicon oxide layer formed on a semiconductor substrate by using said plasma,
- wherein aluminum is supplied into said plasma in said vacuum vessel from a different area capable of supplying aluminum-containing gas.
1 more element
A plasma processing method comprising the steps of:
- converting a mixed atmosphere of halogen-containing gas with aluminum into plasma by using a plasma processing apparatus including a vacuum vessel, means for generating said plasma in said vacuum vessel, a sample stage on which a sample having a surface to be processed by said plasma is placed, and a power supply for applying a radio-frequency bias voltage to said sample stage;
- and
- etching a silicon nitride layer on a silicon oxide layer formed on a semiconductor substrate by using said plasma,
- wherein silicon is disposed in said plasma processing apparatus and a mixed atmosphere of halogen-containing gas, aluminum and said silicon is converted into plasma,
- wherein a part exposed to said plasma in said vacuum vessel is made of material containing silicon as a main component and said silicon is supplied into said plasma from said part.
2 more elements
Dependencies are inferred from the claim text.