Method of fabricating semiconductor device

A method of fabricating a semiconductor device comprising steps of:

• forming an interlayer dielectric film having an opening;
• forming a first conductive member, which consists of a single layer, in said opening by sputtering;
• and
• performing first heat treatment at a temperature exceeding the sputtering temperature for said sputtering in advance of formation of said first conductive member, wherein
• said step of forming said first conductive member includes a step of performing said sputtering at a low temperature and thereafter performing said sputtering at a high temperature thereby forming said first conductive member.

A method of fabricating a semiconductor device comprising steps of:

• forming an interlayer dielectric film having an opening;
• forming a first conductive member, which consists of a single layer, in said opening;
• performing a first heat treatment at a temperature capable of reducing the quantity of moisture and hydroxyl groups in said interlayer dielectric film in advance of formation of said first conductive member;
• and
• forming a second conductive member containing titanium in said opening after performing said first heat treatment in advance of formation of said first conductive member, wherein the second conductive member is formed at a temperature substantially not at a level capable of removing moisture and hydroxyl groups from the interlayer dielectric film.

A method of fabricating a semiconductor device comprising steps of:

• forming an interlayer dielectric film having an opening;
• forming a first conductive member, which consists of a single layer, in said opening;
• and
• performing first heat treatment at a temperature exceeding the temperature for forming said first conductive layer.