Method of manufacturing a metal wiring in a semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorSung Gyu Pyo
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Abstract
A method of manufacturing a metal wiring in a semiconductor device is disclosed. The method comprises forming a photosensitive film so that an underlying metal wiring can be exposed, adhering an chemical enhancer only to the underlying metal wiring, depositing a metal layer by CECVD method so that the metal layer is selectively deposited at the portion in which the chemical enhancer is formed, removing the photosensitive film and chemical enhancer, and forming a diffusion barrier layer spacer at the sidewall of the metal layer to form an upper metal wiring. Therefore, the disclosed method can solve poor contact with an underlying metal wiring due to shortage of processional margin in the process of forming an upper metal wiring in a high integration semiconductor device.
Claims17
A method of manufacturing a metal wiring in a semiconductor device, comprising the steps of:
- forming a photosensitive film on a semiconductor substrate in which a given structure including an underlying metal wiring is formed, and patterning said photosensitive film to expose said underlying metal wiring;
- performing a chemical enhancer process by which an chemical enhancer is adhered only to an exposed portion of said underlying metal wiring;
- depositing a metal layer on the exposed portion in which said chemical enhancer is adhered;
- removing said photosensitive film and said chemical enhancer;
- and
- forming an insulating film on the entire structure.
Dependencies are inferred from the claim text.