Fabrication method of wiring substrate for mounting semiconductor element and semiconductor device
AssigneesSony Corporation, North Inc.
InventorsKenji Oosawa, Tomoo Iijima, Hidetoshi Kusano
Life of this patent
Estimating the term…
Loading patent…
AssigneesSony Corporation, North Inc.
InventorsKenji Oosawa, Tomoo Iijima, Hidetoshi Kusano
Estimating the term…
By adopting an electrolytic plating method in forming the bump, the drawbacks of the conventional electrolytic plating method should be avoided. For example, the necessity of adopting a lead wiring for each wiring or the like should be eliminated. On the surface of a metal base, a resist film (first resist film) having a negative pattern for forming a wiring film and a resist film (second resist film) having a negative pattern for forming the bump or the pad is formed. By using these films as masks, electrolytic plating of a bump material film is conducted to form the bump. Subsequently, after only the second film is removed. By using the first resist film as a mask, electrolytic plating is then conducted to form a wiring film.
A method of fabricating a wiring substrate for mounting a semiconductor element, the method comprising the steps of:
Dependencies are inferred from the claim text.