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AssigneeSumitomo Chemical Company, Limited
InventorsYasushi Iyechika, Yoshinobu Ono, Tomoyuki Takada
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The present invention provides for a method of manufacturing a Group III-V compound semiconductor, which grows a nitrogen-contained Group III-V compound semiconductor of the p-type conductivity, without performing any particular post-processing after growing the compound semiconductor, and which prevents a deterioration in the yield of manufacturing light emitting elements due to post-processing. A first embodiment is directed to a method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0≧x≧1,0≧z≧1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that carrier gas is inert gas in which the concentration of hydrogen is 0.5 % or smaller by volume. A second embodiment is directed to a method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0≧x≧1, 0≧y≧1,0≧1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that after etching within a reaction furnace using at least one compound which is selected from a compound group consisting of compounds of halogenated hydrogen, compounds of halogen and Group V elements and compounds of halogen, hydrogen and Group V elements, inert gas in which the concentration of hydrogen is 0.5% or smaller by volume is used as carrier gas.
A method of manufacturing a Group III-V compound semiconductor which contains Group II elements as p-type impurities and which is expressed by a general formula InxGayAlzN (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) which comprises conducting thermal decomposition by a vapor phase method using metalorganics, wherein the carrier gas is an inert gas in which the concentration of hydrogen is 0.5% or smaller by volume, and the concentration of hydrogen is maintained at 0.5% or smaller by volume in an atmosphere, during a reduction in temperature of the Group III-V compound semiconductor after the Group III-V compound semiconductor is grown.
A method of manufacturing a Group III-TV compound semiconductor which contains Group II elements as p-type impurities and which is expressed by a general formula InxGayAlzN (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) which comprises conducting thermal decomposition by a vapor phase method using metalorganics, wherein after etching within a reaction furnace using at least one compound which is selected from a group consisting of compounds of halogenated hydrogen, compounds of halogen and Group V elements, and compounds of halogen, hydrogen and Group V elements, and inert gas is used, wherein the inert gas has a concentration of hydrogen of 0.5% or smaller by volume, and the concentration of hydrogen is maintained at 0.5% or smaller by volume in an atmosphere, during a reduction in temperature of the Group III-V compound semiconductor after the Group III-V compound semiconductor is grown.
Dependencies are inferred from the claim text.