Method for manufacturing transistor of double spacer structure
AssigneeHYnix Smeiconductor Inc.
InventorHa Zoong Kim
Life of this patent
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Abstract
A method for manufacturing a transistor of a double spacer structure is disclosed, in which a local LDD region is formed by forming a transistor including a gate electrode, and an oxide film spacer and a nitride film spacer formed sequentially, dry etching the oxide film spacer using the nitride film spacer as a mask, and injecting an impurity ion into an LDD region of a portion where the oxide film spacer is etched, short channel effect is prevented and current characteristic of the transistor is improved by combination of the ion injection process considering trade-off relation between the short channel effect and the current characteristic of the transistor during design of a device.
Claims12
A method for manufacturing a transistor of a double spacer structure, the method comprising:
- forming a transistor including a gate electrode formed on a semiconductor substrate and a double spacer structure of a first insulating film spacer and a second insulating film spacer;
- removing the first insulating film spacer formed between the gate electrode and the second insulating film spacer;
- and
- forming a local LDD region in a surface of the semiconductor substrate between the gate electrode and the second insulating film spacer.
A method for manufacturing a transistor of a double spacer structure, the method comprising:
- forming a gate electrode on a semiconductor substrate;
- forming a gate passivation film on an entire surface;
- forming an LDD region and a pocket impurity ion region in a surface of the semiconductor substrate at both sides of the gate electrode;
- forming a double spacer structure of a first insulating film spacer and a second insulating film spacer on the semiconductor substrate at both sides of the gate electrode;
- forming source and drain regions in the surface of the semiconductor substrate at both sides of the gate electrode including the double spacer structure;
- dry etching the first insulating film spacer to expose the gate passivation film between the gate electrode and the second insulating film spacer;
- and
- forming a local LDD region in the LDD region between the gate electrode and the second insulating film spacer.
A method for manufacturing a transistor of a double spacer structure, the method comprising:
- forming a gate electrode on a semiconductor substrate;
- forming a gate passivation film on an entire surface;
- forming an LDD region and a pocket impurity ion region in a surface of the semiconductor substrate at both sides of the gate electrode;
- sequentially forming a first insulating film and a second insulating film on the gate passivation film, the first insulating film having different etching selectivity from that of the gate passivation film and the second insulating film;
- anisotropically etching the first insulating film and the second insulating film to form a double spacer structure of a first insulating film spacer and a second insulating film spacer;
- forming source and drain regions in the surface of the semiconductor substrate at both sides of the gate electrode including the double spacer structure;
- dry etching the first insulating film spacer to expose the gate passivation film between the gate electrode and the second insulating film spacer;
- and
- forming a local LDD region in the LDD region between the gate electrode and the second insulating film spacer.
Dependencies are inferred from the claim text.