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US 6,617,226 B1Granted
Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsKyoioni Suguro, Kiyotaka Miyano, Ichiro Mizushima, Yoshitaka Tsunashima, Takayuki Hiraoka, Yasushi Akasaka, Tsunetoshi Arikado
Life of this patent
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Abstract
In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a thermal oxide film that is an element isolating insulating film, in order to prevent formation of facets. Subsequently, unwanted portions of the epitaxial layer are removed by means of CMP to complete an STI element isolating structure.
Claims4
A method for manufacturing a semiconductor device comprising:
- forming an insulating film on a semiconductor substrate;
- forming openings in said insulating film to partly expose a surface of said semiconductor substrate;
- forming a semiconductor layer which fills said openings and extends upward above said insulating film, by using the exposed portion as a seed to epitaxially grow;
- removing portions of said semiconductor layer outside said openings;
- making a top surface of said semiconductor layer within said openings lower than an opening surface of each of said openings;
- and
- flattening the top surface of said semiconductor layer by heating said semiconductor layer in an inert gas atmosphere.
4 more elements
Dependencies are inferred from the claim text.