US 6,617,224 B2 · Multiple stage deposition process for filling trenches

Abstract

In a method of filling a trench in a substrate, a substrate is placed in a process zone, the substrate comprising a trench. A first deposition process is performed by providing a first gas into the process zone, maintaining first process conditions to deposit a first silicon oxide material in the trench in the substrate, and exhausting the first gas. Thereafter, a second deposition process is performed by providing a second gas into the process zone, maintaining second process conditions to deposit a second silicon oxide material to fill the trench and optionally overfill the trench, and exhausting the second gas. The multiple process deposition process allows the trench to be filled and overfilled with different types of silicon oxide materials to render the trench filling process more economical.

Claims4

Dependent claims

A method of filing a trench in a substrate having a gate oxide layer and an overlying silicon nitride layer the method comprising:

(a) in a first deposition process, exposing the substrate to a first gas maintained at process conditions that cause the first gas to deposit in the trench in the substrate, a first silicon oxide material having a first lower shrinkage less than about 1.3%;
and
(b) in a second deposition process, exposing the substrate to a second gas maintained at process conditions that cause the second gas to deposit in the trench, a second silicon oxide material having a second higher shrinkage.

Dependencies are inferred from the claim text.

Multiple stage deposition process for filling trenches

Life of this patent

Multiple stage deposition process for filling trenches

Life of this patent

Abstract

Claims4