Semiconductor-on-insulator structure fabrication having a temporary plug
AssigneeZarlink Semiconductor Inc.
InventorsMartin Clive Wilson, Simon Lloyd Thomas
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Abstract
A method of forming an electrical isolation trench in a silicon-on-insulator (SOI) structure. The method comprises forming a first oxide layer on top of the upper silicon layer of the SOI structure, forming a polysilicon layer on top of said oxide layer, forming a second oxide layer on top of said polysilicon layer, patterning the first oxide layer, polysilicon layer, and second oxide layer to provide an etch mask, etching the upper silicon layer of the SOI structure to form said trench, and removing said second oxide layer and said polysilicon layer.
Claims9
A method of forming an electrical isolation trench in a semiconductor-on-insulator structure, the method comprising:
- forming a first oxide layer on top of an upper semiconductor layer of the semiconductor-on-insulator structure;
- forming a polysilicon layer on top of said first oxide layer;
- forming a second oxide layer on top of said polysilicon layer;
- patterning the first oxide layer, polysilicon layer, and second oxide layer to provide an etch mask;
- etching the upper semiconductor layer of the semiconductor-on-insulator structure to form said trench;
- filling the trench with a temporary plug;
- removing said second oxide layer;
- removing said polysilicon layer;
- removing said temporary plug either before or after removing the polysilicon layer;
- and
- filling the trench with dielectric material.
A method of forming an electrical isolation trench in a semiconductor-on-insulator structure, the method comprising:
- forming a first oxide layer on top of an upper semiconductor layer of the semiconductor-on-insulator structure;
- forming one or more mask layers on top of said first oxide layer;
- patterning the first oxide layer and the one or more mask layers to provide an etch mask;
- etching the upper semiconductor layer of the semiconductor-on-insulator structure to form said trench;
- filling the trench with resist;
- and
- removing said one or more mask layers.
Dependencies are inferred from the claim text.