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US 6,617,210 B1Granted
Method for making a semiconductor device having a high-k gate dielectric
AssigneeIntel Corporation
InventorsRobert Chau, Reza Arghavani
Life of this patent
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Abstract
A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. An insulating layer, which is compatible with the dielectric layer and a gate electrode to be formed on the insulating layer, is formed on the dielectric layer, and a gate electrode is then formed on the insulating layer.
Claims10
A method for making a semiconductor device comprising:
- forming a high-k gate dielectric layer on a substrate;
- forming an insulating layer on the high-k gate dielectric layer that is compatible with the high-k gate dielectric layer and a gate electrode to be formed on the insulating layer;
- and
- forming a layer that comprises polysilicon on the insulating layer;
- wherein the insulating layer comprises silicon nitride or a metallic nitride;
- the substrate comprises silicon;
- and the high-k gate dielectric layer Is formed by atomic layer chemical vapor deposition, and is between about 5 angstroms and about 60 angstroms thick.
4 more elements
A method for making a semiconductor device comprising:
- forming a high-k gate dielectric layer on a substrate, the high-k gate dielectric layer being less than about 100 angstroms thick and comprising a material selected from the group consisting of hafnium oxide, zirconium oxide, titanium oxide, and aluminum oxide;
- forming on the high-k gate dielectric layer an insulating layer that comprises silicon nitride or a metallic nitride and that is between about 3 angstroms and about 25 angstroms thick;
- forming a layer that comprises polysilicon on the insulating layer;
- and
- etching the polysilicon containing layer, the insulating layer, and the high-k gate dielectric layer.
2 more elements
Dependencies are inferred from the claim text.