Method of forming a capacitor structure
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Guy T. Blalock
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Abstract
A capacitor structure and method of forming it are described. In particular, a high-K dielectric oxide is provided as the capacitor dielectric. The high-K dielectric is deposited in a series of thin layers and oxidized in a series of oxidation steps, as opposed to a depositing a single thick layer. Further, at least one of the oxidation steps is less aggressive than the oxidation environment or environments that would be used to deposit the single thick layer. This allows greater control over oxidizing the dielectric and other components beyond the dielectric.
Claims8
A method of insulating a semiconductor device, comprising:
- providing a series of insulating layers for said semiconductor device under oxidizing conditions;
- and
- controlling oxidation beyond said series of insulating layers by way of said oxidizing conditions.
A method of processing a capacitor electrode configured to oxidize in response to providing an amount of high-K oxide for said electrode using a first set of oxidizing conditions including a process time, an ambient temperature, an ambient pressure, an ambient atmosphere, and excitation source values;
- wherein said method comprises:
- providing a first portion of said amount of high-K oxide for said electrode using a second set of oxidizing conditions that are less aggressive than said first set;
- and
- providing a second portion of said amount of high-K oxide.
Dependencies are inferred from the claim text.