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AssigneeMacronix International Co., Ltd.
InventorsJiann-Long Sung, Chen-Chin Liu, Li-Yeh Chou
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A method of forming a protective film to prevent a nitride read only memory is disclosed. In the method of the present invention, the protective layers are formed in the inter-level dielectrics (ILD)/inter-metal dielectrics (IMD) layer of the nitride read only memory cell, and the protective layers can prevent the nitride read only memory cell from being penetrated by the ultra-violet light or plasma, and avoid increasing the ion mobility to cause the charge gain during the process that affects the stability of the electricity of the nitride read only memory cell. Additionally, the threshold voltage of the nitride read only memory cell can decrease to expand the range of the threshold voltage.
A method of forming a protective film to prevent a nitride read only memory cell charging, comprising:
A method of forming a protective film to prevent a nitride read only memory cell charging, comprising:
A method of forming a protective film to prevent a nitride read only memory cell charging, comprising:
Dependencies are inferred from the claim text.