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US 6,617,190 B2Granted
A-WO3-gate ISFET devices and method of making the same
AssigneeNational Yunlin University of Science and Technology
InventorsJung Chuan Chou, Jung Lung Chiang
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Abstract
Disclosed is an ISFET comprising a H+-sensing membrane consisting of RF-sputtering a-WO3. The a-WO3/SiO2-gate ISFET of the present invention is very sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.
Claims27
A method for fabricating an a-WO3 gated ISFET device, comprising the following steps:
- providing a semiconductor substrate;
- forming a dummy gate on the semiconductor substrate to define the gate area of the ISFET;
- forming a source/drain in the semiconductor substrate beside the dummy gate;
- removing the dummy gate;
- forming an oxide layer on the semiconductor substrate;
- forming a photoresist pattern on the oxide layer;
- removing portions of the oxide layer using the photoresist pattern as a mask to form a gate oxide layer;
- removing the photoresist pattern;
- and
- forming an a-WO3 gate on the gate oxide layer to form an ISFET.
7 more elements
A method for fabricating an a-WO3 gated ISFET, comprising the following steps:
- providing a P-type semiconductor substrate;
- forming a pad oxide layer on the semiconductor layer;
- removing a portion of the pad oxide layer to form a dummy gate to define a gate area;
- doping the semiconductor substrate by using the dummy gate as a mask to form a source/drain beside the dummy gate;
- removing the dummy gate;
- forming an oxide layer on the semiconductor substrate;
- forming a photoresist pattern on the oxide layer;
- removing portions of the oxide layer using the photoresist pattern as a mask to form a gate oxide layer;
- removing the photoresist pattern;
- and
- forming an a-WO3 layer on the gate oxide layer to form an a-WO3 gate.
8 more elements
Dependencies are inferred from the claim text.