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US 6,617,183 B2Granted
Method for forming p-type semiconductor film and light emitting device using the same
AssigneeMurata Manufacturing Co., Ltd.
InventorsMichio Kadota, Yasuhiro Negoro, Yoshinori Miura
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Abstract
A method for forming a p-type semiconductor film comprises the steps of: providing on a substrate a group II-VI compound semiconductor film which is doped with a p-type impurity and comprises either MgXZn1−XO (0≦X≦1) or CdXZn1−XO (0≦X≦1) and activating the p-type impurity by annealing the doped semiconductor film.
Claims6
A method for forming a p-type semiconductor film comprising the steps of:
- providing on a substrate a group II-VI compound semiconductor film comprising one of ZnO, MgXZn1−XO (0≦X≦1) or CdXZn1−XO (0≦X≦1);
- doping said semiconductor film with a p-type impurity by an ion implanting method;
- and
- activating the p-type impurity by annealing the doped semiconductor film at 450° C. or more until the resistivity of the doped semiconductor film is decreased to 106 Ω·cm or less.
1 more element
Dependencies are inferred from the claim text.