Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition
AssigneeGenus, Inc.
InventorOfer Sneh
Life of this patent
Estimating the term…
Abstract
A technique to form an ultrathin dielectric layer over a ferromagnetic layer by atomic layer deposition.
Claims21
A method comprising:
- depositing a first ferromagnetic layer onto an underlying material;
- depositing a protective sacrificial layer above the first ferromagnetic layer without exposing the first ferromagnetic layer to ambient environment, the protective sacrificial layer being removal selective over the first ferromagnetic layer;
- exposing the protective sacrificial layer to an oxidizing ambient to undergo photolithographic and material removal processes that form a defined stacked structure by pattern delineating the first ferromagnetic layer;
- placing the material into a vacuum environment prior to removing the protective sacrificial layer;
- removing the protective sacrificial layer by a selective process to expose the first ferromagnetic layer under vacuum;
- and
- depositing a dielectric layer over the first ferromagnetic layer by atomic layer deposition in the vacuum environment.
A method of fabricating a ferromagnetic-dielectric-ferromagnetic tunneling device comprising:
- depositing a first ferromagnetic layer onto a substrate;
- depositing a protective sacrificial layer above the first ferromagnetic layer without exposing the first ferromagnetic layer to ambient environment, the protective sacrificial layer being etch selective over the first ferromagnetic layer;
- patterning the first ferromagnetic layer and the overlying protective sacrificial layer to form a patterned stack in an oxidizing ambient;
- placing the substrate into an atomic layer deposition chamber;
- removing the protective sacrificial layer in the atomic layer deposition environment to expose the first ferromagnetic layer;
- depositing a dielectric layer over the first ferromagnetic layer by atomic layer deposition;
- and
- depositing a second ferromagnetic layer over the dielectric layer.
The method of claim 14 wherein said removing the protective sacrificial layer includes removing by isotropic dry etch.
The method of claim 14 wherein said removing the protective sacrificial layer includes removing by isotropic dry etch using fluorine chemistry.
The method of claim 14 wherein said depositing the protective sacrificial layer includes depositing W or WNx.
The method of claim 23 wherein said activating further includes activating by exposure to NH3/H2 plasma to remove surface fluorine and facilitate NHx, species termination.
Dependencies are inferred from the claim text.