Semiconductor device having identification number, manufacturing method thereof and electronic device

A method of manufacturing a semiconductor device having a transmitting and receiving circuit wherein an identification number is identified by a memory using a plurality of transistors, comprising the steps:

• a step for forming source and drain regions of a plurality of the transistors on a surface of a semiconductor substrate;
• a step for forming an insulating film so as to cover a plurality of the source and drain regions;
• a step for defining contact holes whose presence or absence are selected according to ‘1’ and ‘0’ stored in the memory, in the insulating film on the transistors by using an electron-beam writing method;
• a step for forming a wiring layer on the insulating film having the contact holes;
• and
• a step for thereafter forming a coil for the reception of a microwave on the semiconductor substrate.

A method of manufacturing a semiconductor device wherein an identification number is identified by a memory using a plurality of transistors, comprising the steps:

• a step for forming source and drain regions of a plurality of the transistors on a surface of a semiconductor substrate;
• a step for forming an insulating film so as to cover a plurality of the source and drain regions;
• a step for defining contact holes whose presence or absence are selected according to ‘1’ and ‘0’ stored in the memory, in the insulating film on the transistors by using an electron-beam writing method;
• a step for forming a wiring layer on the insulating film having the contact holes;
• and
• a step for thereafter forming a coil for the reception of a microwave on the semiconductor substrate,
• wherein the coil is formed for each semiconductor chip by being separated from the semiconductor substrate, and
• wherein a plane long-side size of the semiconductor chip is not more than 0.5 mm.

A method of manufacturing a semiconductor device wherein an identification number is identified by a memory using a plurality of transistors, comprising the steps:

• a step for forming source and drain regions of a plurality of the transistors on a surface of a semiconductor substrate;
• a step for forming an insulating film so as to cover a plurality of the source and drain regions;
• a step for defining contact holes whose presence or absence are selected according to ‘1’ and ‘0’ stored in the memory, in the insulating film on the transistors by using an electron-beam writing method;
• a step for forming a wiring layer on the insulating film having the contact holes;
• and
• a step for thereafter forming a coil for the reception of a microwave on the semiconductor substrate,
• wherein the coil is formed of a metal selected from the group consisting of aluminum and copper.

A method of manufacturing a semiconductor device wherein an identification number is identified by a memory using a plurality of transistors, comprising the steps:

• a step for forming source and drain regions of a plurality of the transistors on a surface of a semiconductor substrate;
• a step for forming an insulating film so as to cover a plurality of the source and drain regions;
• a step for defining contact holes whose presence or absence are selected according to ‘1’ and ‘0’ stored in the memory, in the insulating film on the transistors by using an electron-beam writing method;
• a step for forming a wiring layer on the insulating film having the contact holes;
• and
• a step for thereafter forming a coil for the reception of a microwave on the semiconductor substrate,
• wherein the semiconductor device includes a resonance circuit having a capacitor and the coil, and the capacitor is formed with the wiring layer as one electrode.

A method of manufacturing a semiconductor device having a transmitting and receiving circuit wherein an identification number is identified by a memory using a plurality of transistors, comprising the steps:

• a step for preparing a semiconductor substrate;
• a step for forming the semiconductor device inside a chip area which corresponds to a surface of the semiconductor substrate and whose plane long-side size is smaller than the thickness of the semiconductor substrate;
• a step for removing the semiconductor substrate from the back side until the thickness of the semiconductor substrate becomes thinner than the plane long-side size of the chip area;
• and
• a step for separating the semiconductor device in chip form.

A method of manufacturing a semiconductor device having a transmitting and receiving circuit wherein an identification number is identified by a memory using a plurality of transistors, comprising the steps:

• a step for forming conductive regions which serve as components of the transistor, on a surface of a semiconductor substrate in plural form;
• a step for forming an insulating film over a plurality of the conductive regions;
• a step for selectively defining contact holes in the insulating film formed on the plurality of conductive regions by an electron-beam writing method to obtain the identification number;
• a step for forming wirings connected to the conductive regions through the contact holes respectively;
• a step for thereafter forming a coil for the reception of a microwave on the semiconductor substrate;
• a step for removing the semiconductor substrate from the back side and thinning the same;
• and
• a step for separating the semiconductor substrate in the form of a chip;
• wherein a plane long-side size of the chip is smaller than the thickness of the semiconductor substrate prior to the start of its manufacture and is larger than the thickness of the thinned semiconductor substrate.

A method of manufacturing an electronic device loaded with a semiconductor device wherein an identification number is configured by a memory using a plurality of transistors, comprising the steps:

• a step for forming conductive regions which serve as components of the transistor, on the surface of a semiconductor substrate in plural form;
• a step for forming an insulating film over a plurality of the conductive regions;
• a step for selectively defining contact holes in the insulating film formed on the plurality of conductive regions by an electron-beam writing method to obtain the identification number;
• a step for forming wirings connected to the conductive regions through the contact holes respectively;
• and
• a step for thereafter fixing a tape to the semiconductor device and inspecting electrical characteristics thereof by using test terminals provided at the semiconductor device.

A method of manufacturing an electric device loaded with a semiconductor device wherein an identification number is configured by a 128-bit memory using a plurality of transistors, comprising the steps:

• a step for forming conductive regions which serve as components of the transistors, on a surface of a semiconductor substrate in plural form;
• a step for forming an insulating film over a plurality of the conductive regions;
• a step for selectively defining contact holes in the insulating film formed on the plurality of conductive regions by an electron-beam writing method to obtain the identification number;
• a step for forming wirings connected to the conductive regions through the contact holes respectively;
• a step for placing the semiconductor device on a mounting base substrate;
• and
• a step for bonding the mounting base substrate onto a tape and encapsulating the same in an inlet.

A method of manufacturing an electronic device loaded with a semiconductor device wherein an identification number is configured by a first memory using a plurality of transistors, comprising the steps:

• a step for forming conductive regions which serve as components of the transistor, on a surface of a semiconductor substrate in plural form;
• a step for forming an insulating film over a plurality of the conductive regions;
• a step for selectively defining contact holes in the insulating film formed on the plurality of conductive regions by an electron-beam writing method to obtain the identification number and an encrypted code obtained by enciphering the identification number, which is configured by a second memory using a plurality of transistors;
• a step for forming wirings connected to the conductive regions through the contact holes respectively;
• and
• a step for reading the identification number from the first memory, and collating an encrypted code obtained by enciphering the read identification number according to a procedure similar to said enciphering with an encrypted code read from the second memory, and selecting the semiconductor device as a non-defective product when they coincide with each other and selecting the same as a defective product when they are inconsistent with each other.

A method of manufacturing an electronic device loaded with a semiconductor device wherein an identification number is configured by a memory using a plurality of transistors and a plane long-side size thereof is less than or equal to 0.5 mm, comprising the steps:

• a step for forming conductive regions which serve as components of the transistor, on a surface of a semiconductor substrate in plural form;
• a step for forming an insulating film over a plurality of the conductive regions;
• a step for selectively defining contact holes in the insulating film formed on the plurality of conductive regions by an electron-beam writing method to obtain the identification number;
• a step for forming wirings connected to the conductive regions through the contact holes respectively;
• and
• a step for thereafter dropping the semiconductor device onto paper.

A method of manufacturing a semiconductor device having a transmitting and receiving circuit wherein an identification number is configured by a 128-bit memory using a plurality of transistors, comprising the steps:

• a step for forming, in plural form, conductive regions which serve as components of a transistor, inside an area which corresponds to a surface of a semiconductor substrate and serves as a semiconductor chip whose plane long-side size is 0.5 mm or less;
• a step for forming an insulating film over a plurality of the conductive regions;
• a step for selectively defining contact holes in the insulating film by an electron-beam writing method to form a memory for configuring an identification number using 128 bits;
• and
• a step for forming wirings connected to the conductive regions through the contact holes on the insulating film,
• wherein said selectively contact hole defining step is executed continuously together with a step for defining contact holes employed in a peripheral circuit.

A method of manufacturing a semiconductor device having a transmitting and receiving circuit wherein an identification number is configured by a 128-bit memory using a plurality of transistors, comprising the steps:

• a step for forming conductive regions which serve as components of a transistor, on a surface of a semiconductor device in plural form;
• a step for forming a first insulating film over a plurality of the conductive regions;
• a step for forming a first wiring connected to the conductive regions on the first insulating film;
• a step for forming a second insulating film on a surface including the first wiring;
• a step for selectively defining through holes in the second insulating film by an electron-beam writing method to form a memory for configuring an identification number using 128 bits;
• and
• a step for forming a second wiring connected to the first wiring through the through holes on the second insulating film.

A method of manufacturing a semiconductor device having a transmitting and receiving circuit, comprising the steps:

• a step for preparing a semiconductor substrate;
• a step for forming a semiconductor device inside a chip area which corresponds to a surface of the semiconductor substrate and whose plane long-side size is smaller than the thickness of the semiconductor substrate;
• a step for removing the semiconductor substrate from the back side until the thickness of the semiconductor substrate becomes thinner than the plane long-side size of the chip area;
• and
• a step for separating the semiconductor device in chip form;
• wherein the semiconductor device is provided with a memory for configuring an identification number.

A method of manufacturing a semiconductor device, comprising the steps:

• a step for forming a first memory for storing an identification number code used for identifying an identification number, and a second memory for storing an encrypted code obtained by enciphering the identification number;
• a step for receiving a microwave and transmitting the identification number and the encrypted code;
• and
• a step for collating a second encrypted code obtained by enciphering the identification number read through the microwave according to a procedure similar to said enciphering with a first encrypted code read through the microwave to thereby perform an inspection.