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US 6,617,098 B1Granted
Merged-mask micro-machining process
AssigneeInput/Output, Inc.
InventorsLianzhong Yu, Robert P. Ried, Howard D. Goldberg, Duli Yu
Life of this patent
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Abstract
A merged-mask micro-machining process is provided that includes the application of a plurality of layers of masking material that are patterned to provide a plurality of etching masks.
Claims55
A method of fabricating a three-dimensional structure, comprising:
- providing a substrate;
- applying a layer of a first masking material onto the substrate;
- patterning the layer of the first masking material;
- thin etching the exposed portions of the substrate;
- applying a layer of a second masking material onto the exposed portions of the substrate, the layer of the second masking material is at least as thick as the layer of the first masking material;
- patterning the layer of the second masking material;
- etching the exposed portions of the substrate;
- etching the exposed portions of the layer of the second masking material;
- and
- etching the exposed portions of the substrate.
7 more elements
A method of fabricating a three-dimensional structure, comprising:
- providing a substrate;
- applying a layer of a first masking material onto the substrate;
- applying a layer of a second masking material onto the layer of the first masking material;
- patterning the layer of the second masking material;
- applying a layer of a third masking material onto the portions not covered by the patterned layer of the second masking material, the layer of the third masking material is at least as thick as the combined thickness of the layers of the first and second masking materials;
- patterning the layers of the first and third masking materials;
- etching the exposed portions of the substrate;
- etching the exposed portions of the layers of the first and third masking materials;
- and
- etching the exposed portions of the substrate.
7 more elements
A method of fabricating a three-dimensional structure, comprising:
- providing a substrate;
- applying a layer of a first masking material onto the substrate;
- applying a layer of a second masking material onto the layer of the first masking material;
- patterning the layer of the second masking material;
- patterning the layer of the first masking material;
- applying a layer of a third masking material onto the portions not covered by the patterned layer of the second masking material, the layer of the third masking material is at least as thick as the combined thickness of the layers of the first and second masking materials;
- patterning the layers of the first and third masking materials;
- etching the exposed portions of the substrate;
- etching the exposed portions of the layers of the first and third masking materials;
- and
- etching the exposed portions of the substrate.
8 more elements
A method of fabricating a three-dimensional structure, comprising:
- providing a substrate;
- applying a layer of a first masking material onto the substrate;
- applying a layer of a second masking material onto the layer of the first masking material;
- patterning the layer of the second masking material;
- patterning the layer of the first masking material;
- thin etching the exposed portions of the substrate;
- applying a layer of a third masking material onto the portions not covered by the patterned layer of the second masking material, the layer of the third masking material is at least as thick as the combined thickness of the layers of the first and second masking materials;
- patterning the layers of the first and third masking materials;
- etching the exposed portions of the substrate;
- etching the exposed portions of the layers of the first and third masking materials;
- and
- etching the exposed portions of the substrate.
9 more elements
A method of fabricating a three-dimensional structure, comprising:
- providing a substrate;
- applying a layer of a first masking material onto the substrate, said first masking material being one of silicon dioxide aud a metal;
- patterning the layer of the first masking material;
- applying a layer of a second masking material onto the patterned layer of the first masking material, said second masking material being one of a photoresist and an etch resistant polymer;
- patterning the layer of the second masking material;
- dry etching the exposed portions of the substrate;
- etching the exposed portions of the patterned layer of the first masking material;
- and
- dry etching the exposed portions of the substrate.
6 more elements
A method of fabricating a three-dimensional structure, comprising:
- (1) providing a substrate;
- (2) applying a layer of a first masking material onto the substrate;
- (3) patterning the layer of the first masking material;
- (4) applying a layer of a second masking material onto the exposed portions of the substrate, the layer of the second masking material is at least as thick as the layer of the first masking material;
- (5) patterning a fraction of the thickness of the layer of the second masking material a plurality of times;
- (6) etching the exposed portions of the substrate;
- (7) etching a fraction of the thickness of the exposed portions of the layer of the second masking material;
- (8) etching the exposed portions of the substrate;
- and
- (9) repeating steps (7) and (8) a plurality of times.
7 more elements
A method of fabricating a three-dimensional structure, comprising:
- (1) providing a substrate;
- (2) applying a layer of a first masking material onto the substrate;
- (3) patterning the layer of the first masking material;
- (4) applying a layer of a second masking material onto the exposed portions of the substrate, the layer of the second masking material is at least as thick as the layer of the first masking material;
- (5) patterning a fraction of the thickness of the layer of the second masking material a plurality of times;
- (6) applying a layer of a third masking material onto substrate;
- (7) patterning the layer of the third masking material;
- (8) etching the layer of the third masking material;
- (9) etching the exposed portions of the substrate;
- (10) etching a fraction of the thickness of the exposed portions of the layer of the second masking material;
- (11) etching the exposed portions of the substrate;
- and
- (12) repeat steps (10) and (11) a plurality of times.
10 more elements
Dependencies are inferred from the claim text.