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US 6,617,062 B2Granted
Strain-relieved tunable dielectric thin films
AssigneeParatek Microwave, Inc.
InventorWontae Chang
Life of this patent
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Abstract
Tunable dielectric thin films are provided which possess low dielectric losses at microwave frequencies relative to conventional dielectric thin films. The thin films include a low dielectric loss substrate, a buffer layer, and a crystalline dielectric film. Barium strontium titanate may be used as the buffer layer and the crystalline dielectric film. The buffer layer provides strain relief during annealing operations.
Claims39
A tunable dielectric thin film comprising:
- a low dielectric loss substrate;
- a buffer layer on the low dielectric loss substrate;
- and
- a crystalline dielectric film on the buffer layer, wherein the buffer layer and the crystalline dielectric film comprise barium strontium titanate and wherein the barium strontium titanate comprises a randomly oriented crystalline cubic phase in each of the buffer layer and the crystalline dielectric film.
1 more element
A tunable microwave device comprising:
- a low dielectric loss substrate;
- a buffer layer on the low dielectric loss substrate;
- a crystalline dielectric film on the buffer layer, wherein the buffer layer and the crystalline dielectric film comprise barium strontium titanate and wherein the barium strontium titanate comprises a randomly oriented crystalline cubic phase in each of the buffer layer and the crystalline dielectric film;
- and
- a pair of electrodes on the crystalline dielectric film, wherein the pair of electrodes are separated from one another by a predetermined gap.
2 more elements
A tunable dielectric thin film comprising:
- a low dielectric loss substrate;
- a buffer layer deposited on the low dielectric loss substrate in an oxygen background pressure of about 200 mTorr;
- and
- a crystalline dielectric film deposited on the buffer layer and then annealed in flowing oxygen at about 1000° C. for about 6 hours, wherein the buffer layer and the crystalline dielectric film comprise barium strontium titanate and wherein the barium strontium titanate comprises a randomly oriented crystalline cubic phase in each of the buffer layer and the crystalline dielectric film.
1 more element
Dependencies are inferred from the claim text.