Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting device
AssigneeToyoda Gosei Co., Ltd.
InventorsMasayoshi Koike, Shiro Yamasaki
Life of this patent
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Abstract
A clad layer is provided as a multilayer structure made of an alternate laminate of 20 layers of Al0.2Ga0.8N 50 nm thick and 20 layers of Ga0.99In0.01N 20 nm thick. The clad layer about 1.4 μm thick has a low elastic constant because the clad layer is provided as a multilayer structure. In a laser diode, it is useful that another layer such as a guide layer requiring a band gap of aluminum gallium nitride (AlxGa1-xN 0<x<1) is provided as a multilayer structure made of aluminum gallium nitride (AlxGa1-xN 0<x<1) and gallium indium nitride (GayGa1-yN 0<y<1).
Claims3
A Group III nitride compound semiconductor device comprising at least three layers of AlxGa1-xN (0<x<1), and at least three layers of GayIn1-yN (0<y<1), said AlxGa1-xN layers and said GayIn1-yN layers being laminated alternately, wherein each of said layers of GayIn1-yN (0<y<1) has a thickness in a range of from 15 nm to 30 nm, inclusively.
A Group III nitride compound semiconductor light-emitting device, comprising a Group III nitride compound semiconductor device including at least three layers of AlxGa1-xN (0<x<1) and at least three layers of GayIn1-yN (0<y<1), wherein said AlxGa1-xN layers and said GayIn1-N layers are laminated alternately and each of said layers of GayIn1-yN (0<y<1) has a thickness in a range of from 15 nm to 30 nm, inclusively.
Dependencies are inferred from the claim text.