Transparent conductive laminate, its manufacturing method, and display comprising transparent conductive laminate
AssigneeTeijin Limited
InventorsHiroshi Hara, Seiji Tsuboi
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AssigneeTeijin Limited
InventorsHiroshi Hara, Seiji Tsuboi
Estimating the term…
A transparent conductive laminate in which a crystalline transparent conductive film substantially made of In—Sn—O on a transparent substrate composed of a thermoplastic polymer film, is provided. The crystalline part of the transparent conductive film (ITO-film) has a specific crystalline structure in which the X-ray diffraction intensity from the (222) crystal plane or the (440) crystal plane is highest, and [X440/222], the ratio of the X-ray diffraction intensity from the (440) crystal plane to that from the (222) crystal plane, is within the range of 0.2 to 2.5. The laminate has a low resistivity, and it is useful as an electrode material for a liquid crystal display, an electroluminescence device, a touch panel or the like. The transparent conductive laminate can be manufactured by combining the control of film fabricating atmosphere during sputtering and a heat treatment under specific conditions after film fabricating.
A transparent conductive laminate comprising a crystalline transparent conductive film substantially consisting of In—Sn—O and a transparent substrate composed of a thermoplastic polymer film, which is characterized in that the crystalline part of the conductive film has the highest X-ray diffraction intensity from the (222) crystal plane or the (440) crystal plane, the ratio of the X-ray diffraction intensity from the (440) crystal plane to that from the (222) crystal plane is within the range of 0.2 to 2.5 and the ratio of the X-ray diffraction intensity from the (400) crystal plane to that from the (440) crystal plane of the crystalline part is 0.478 or less.
A process for manufacturing a transparent conductive laminate by fabricating a transparent conductive film onto a transparent substrate consisting of a thermoplastic film by a sputtering method using a target mainly composed of In—Sn—O, which is characterized in that the process comprises
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