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US 6,617,037 B2Granted
Silicon based substrate with a CTE compatible layer on the substrate
AssigneeUnited Technologies Corporation
InventorsEllen Y. Sun, Harry E. Eaton
Life of this patent
Estimating the term…
Abstract
An article comprising a substrate containing silicon and at least one layer which contains a coefficient of thermal expansion (CTE) tailoring additive in an amount sufficient to maintain a compatible CTE with at least one adjacent layer and the substrate.
Claims18
An article comprising:
- a substrate comprising silicon;
- and
- at least one layer, wherein the least one layer contains a coefficient of thermal expansion (CTE) tailoring additive in an amount sufficient to maintain a compatible CTE with the substrate wherein the CTE tailoring additive is selected from the group consisting of NbOx and NbOx plus an oxide selected from the group consisting of MgO, CaO, SrO, BaO, Ta2O5, Al2O3, Y2O3, La2O3, rare earth oxides and mixtures thereof where x=1 to 3 and, wherein said layer comprises up to 80 wt. % of said CTE tailoring additive.
An article comprising:
- a substrate comprising silicon;
- and
- at least one layer, wherein the layer comprises NbOx (where x=1 to 3) and an oxide selected from the group consisting of MgO, CaO, SrO, BaO, Ta2O5, Al2O3, Y2O2, La2O3 and mixtures thereof wherein the least one layer maintains a compatible CTE with the substrate.
An article comprising:
- a substrate comprising silicon;
- and
- at least one layer, wherein the layer is selected from the group consisting of Nb2O5.Al2O3 and 2 BaO.2SrO.3Nb2O5 wherein the least one layer has a coefficient of thermal expansion (CTE) which is compatible with the coefficient of thermal expansion of the substrate.
Dependencies are inferred from the claim text.