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US 6,617,036 B2Granted
Barrier layer for silicon containing substrate
AssigneeUnited Technologies Corporation
InventorsHarry E. Eaton, John E. Holowczak
Life of this patent
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Abstract
A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a barium-strontium aluminosilicate includes an aluminosilicate of Group IIA and/or Group IIIB and a Group VB oxide.
Claims31
An article comprising:
- a substrate comprising silicon;
- and
- a barrier layer comprising an aluminosilicate selected from the group consisting of Group IIA, Group IIIB and mixtures thereof, and further comprising an oxide selected from Group VB, wherein the barrier layer inhibits the formation of gaseous species of Si when the article is exposed to a high temperature, aqueous environment.
Dependencies are inferred from the claim text.