Semiconductor thin film and thin film device
AssigneeKaneka Corporation
InventorsMasashi Yoshimi, Takafumi Fujihara
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Abstract
A semiconductor thin film which is deposited by using a chemical vapor deposition method at an underlying layer temperature of 400° C. or less, and contains, as main component elements, a Group IV atom and hydrogen atom. A temperature dependency of an amount of release of hydrogen atoms within the film when the film is heated from room temperature exhibits a profile having a peak of the hydrogen releasing amount at 370° C. or higher and 410° C. or less, and a half-value width of the peak is 30° C. or less.
Claims3
A semiconductor thin film which is deposited by using a chemical vapor deposition method at an underlying layer temperature of 400° C. or less, and contains, as main component elements, a Group IV atom and hydrogen atom, wherein a temperature dependency of an amount of release of hydrogen atoms within the film when the film is heated from room temperature exhibits a profile having a peak of the hydrogen releasing amount at 370° C. or higher and 410° C. or less, and a half-value width of said peak is 30° C. or less.
Dependencies are inferred from the claim text.