Methods for wafer proximity cleaning and drying
AssigneeLam Research Corporation
InventorsJohn Martin de Larios, Mike Ravkin, Glen Travis, Jim Keller, Wilbur Krusell
Life of this patent
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Abstract
A method for preparing a semiconductor wafer surface is provided which includes providing a plurality of source inlets and a plurality of source outlets and applying isopropyl alcohol (IPA) vapor gas through the plurality of source inlets to the wafer surface when the plurality of source inlets and outlets are in close proximity to the wafer surface. The method also includes applying a fluid through the plurality of source inlets to the wafer surface while applying the IPA vapor gas, and removing the applied IPA vapor gas and fluid from the wafer surface through the plurality of source outlets.
Claims16
A method for cleaning and drying a semiconductor wafer comprising:
- providing a proximity head which includes a plurality of source inlets and a plurality of source outlets;
- providing the proximity head close to a wafer surface;
- generating a first pressure on a fluid film present on the wafer surface when the proximity head is in a first position that is close to the wafer surface;
- introducing a second pressure on the fluid film present on the wafer surface when the proximity head is in the first position;
- and
- producing a pressure difference wherein the first pressure is greater than the second pressure, the pressure difference being configured to cause the removal of the fluid film from the wafer surface.
A method for preparing a semiconductor wafer surface, comprising:
- providing a plurality of source inlets and a plurality of source outlets;
- applying isopropyl alcohol (IPA) vapor gas through the plurality of source inlets to the wafer surface when the plurality of source inlets and outlets are in close proximity to the wafer surface;
- applying a fluid through the plurality of source inlets to the wafer surface while applying the IPA vapor gas;
- and
- removing the applied IPA vapor gas and fluid from the wafer surface through the plurality of source outlets.
Dependencies are inferred from the claim text.