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US 6,615,668 B2Granted
Semiconductor pressure sensor having signal processor circuit
AssigneeDenso Corporation
InventorsInao Toyoda, Yasutoshi Suzuki
Life of this patent
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AssigneeDenso Corporation
InventorsInao Toyoda, Yasutoshi Suzuki
Estimating the term…
A diaphragm that distorts according to pressure applied thereon and a signal processor circuit are formed on a semiconductor substrate having an (110)-surface-orientation. Stain gauges converting the diaphragm distortion into an electric signal and forming a bridge circuit are formed on the diaphragm. The electric signal from the bridge circuit is processed by the signal processor circuit. A pair of transistors constituting an input circuit of an amplifier in the signal processor circuit are positioned on the substrate to equalize their source-drain current directions. Thermal stress influence on the sensor outputs is minimized since sensor components are formed on the substrate having the (110)-surface orientation, and thereby the pressure applied to the diaphragm is accurately detected.
A semiconductor pressure sensor comprising:
A semiconductor pressure sensor comprising:
Dependencies are inferred from the claim text.