Method for producing cerium oxide, cerium oxide abrasive, method for polishing substrate using the same and method for manufacturing semiconductor device

Abstract

The present invention provides a method for producing cerium oxide comprising rapid heating of cerium salts to a calcining temperature to calcine them, a cerium oxide abrasive containing the cerium oxide produced by the method and pure water, an abrasive containing a slurry in which cerium oxide particles having an intensity ratio of an area of a primary peak appearing at 27 to 30° to that of a secondary peak appearing at 32 to 35° (primary peak/secondary peak) in a powder X-ray diffraction chart of 3.20 or more are dispersed in a medium, an abrasive containing a slurry in which cerium oxide particles whose bulk density is 6.5 g/cm3 or less are dispersed into a medium, an abrasive containing a slurry in which abrasive grains having pores are dispersed into a medium, a method for polishing a substrate comprising polishing a predetermined substrate using the abrasive; and a method for manufacturing a semiconductor comprising the step of polishing by the abrasive.

Dependencies are inferred from the claim text.