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US 6,614,076 B2Granted
EL display device having a pixel portion and a driver circuit
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsRitsuko Kawasaki, Hidehito Kitakado, Kenji Kasahara, Shunpei Yamazaki
Life of this patent
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Abstract
To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.
Claims34
An EL display device comprising:
- a pixel portion and a driver circuit for the pixel portion over one substrate;
- a switching thin film transistor formed in the pixel portion and including:
- a first semiconductor film;
- at least a first LDD region in the first semiconductor film;
- a first gate insulating film formed between the first semiconductor film and the substrate;
- a first gate electrode formed between the first gate insulating film and the substrate;
- a current controlling thin film transistor formed in the pixel portion and including:
- a second semiconductor film;
- at least a second LDD region in the second semiconductor film;
- a second gate insulating film formed between the second semiconductor film and the substrate;
- and
- a second gate electrode formed between the second gate insulating film and the substrate,
- wherein the first LDD region includes an n-type impurity at a first concentration while the second LDD region includes the n-type impurity at a second concentration,
- wherein the second concentration is higher than the first concentration.
11 more elements
An EL display device comprising:
- a pixel portion and a driver circuit for the pixel portion over one substrate;
- a bottom gate type switching thin film transistor formed in the pixel portion and including:
- a first gate electrode on an insulating surface;
- a first semiconductor island formed over the first gate electrode having a first gate insulating film interposed therebetween, said first semiconductor island including a first source region, a first drain region, a first channel region, and a pair of first lightly doped drain (LDD) regions;
- a bottom gate type current controlling thin film transistor formed in the pixel portion and including:
- a second gate electrode on the insulating surface;
- a second semiconductor island formed over the second gate electrode having a second gate insulating film interposed therebetween, said second semiconductor island including a second source region, a second drain region, a second channel region, and a pair of second LDD regions;
- wherein each of the first LDD regions includes an n-type impurity at a first concentration while each of the second LDD regions includes the n-type impurity at a second concentration,
- wherein the second concentration is higher than the first concentration.
6 more elements
An EL display device comprising:
- a pixel portion and a driver circuit formed over a substrate;
- a switching thin film transistor formed in the pixel portion and including:
- a first semiconductor film;
- at least a first LDD region in the first semiconductor film;
- a first gate insulating film formed between the first semiconductor film and the substrate;
- and
- a first gate electrode formed between the first gate insulating film and the substrate,
- a current controlling thin film transistor formed in the pixel portion and including:
- a second semiconductor film;
- at least a second LDD region in the second semiconductor film;
- a second gate insulating film formed between the second semiconductor film and the substrate;
- and
- a second gate electrode formed between the second gate insulating film and the substrate,
- at least one CMOS circuit formed in the driver circuit and including an n-channel thin film transistor and a p-channel thin film transistor, the n-channel thin film transistor including:
- a third semiconductor film;
- at least a third LDD region in the third semiconductor film;
- a third gate insulating film formed between the third semiconductor film and the substrate;
- and
- a third gate electrode formed between the third gate insulating film and the substrate,
- wherein the first LDD region contains an n-type impurity at a first concentration,
- wherein the second LDD region contains the n-type impurity at a second concentration,
- wherein the third LDD region contains the n-type impurity at a third concentration,
- wherein the second concentration is higher than the first concentration.
20 more elements
An EL display device comprising:
- a pixel portion and a driver circuit formed over a substrate;
- a switching thin film transistor formed in the pixel portion and including:
- a first semiconductor film;
- at least a first LDD region in the first semiconductor film;
- a first gate insulating film formed between the first semiconductor film and the substrate;
- and
- a first gate electrode formed between the first gate insulating film and the substrate,
- wherein the first LDD region partially overlaps the first gate electrode with the first gate insulating film interposed therebetween,
- a current controlling thin film transistor formed in the pixel portion and including:
- a second semiconductor film;
- at least a second LDD region in the second semiconductor film;
- a second gate insulating film formed between the second semiconductor film and the substrate;
- and
- a second gate electrode formed between the second gate insulating film and the substrate,
- wherein the second LDD region entirely overlap the second gate electrode with the second gate insulating film interposed therebetween,
- at least one CMOS circuit formed in the driver circuit and including an n-channel thin film transistor and a p-channel thin film transistor, the n-channel thin film transistor including:
- a third semiconductor film;
- at least a third LDD region in the third semiconductor film;
- a third gate insulating film formed between the third semiconductor film and the substrate;
- and
- a third gate electrode formed between the third gate insulating film and the substrate,
- wherein the first LDD region contains an n-type impurity at a first concentration,
- wherein the second LDD region contains the n-type impurity at a second concentration,
- wherein the third LDD region contains the n-type impurity at a third concentration,
- wherein the second concentration is higher than the first concentration.
22 more elements
Dependencies are inferred from the claim text.