Semiconductor laser element and method of producing the same
AssigneeSharp Kabushiki Kaisha
InventorSyuzo Ohbuchi
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Abstract
In a semiconductor laser element having a semiconductor substrate, and a crystal layer formed on a main surface of the semiconductor substrate, the crystal layer having in its inside a waveguide, a light-emitting point alignment mark is provided on an intersection line of an electrode surface of the semiconductor laser element with a plane which includes the waveguide and which is perpendicular to the electrode surface. The light-emitting point alignment mark having a length in a width direction of the semiconductor laser element of not more than 20 μm. A visually recognizable direction indicating mark is also provided on the same side as the light-emitting point alignment mark in a direction in which the waveguide extends.
Claims5
A semiconductor laser element comprising a semiconductor substrate and a crystalline layer formed on a main surface of the semiconductor substrate, the crystalline layer having in its inside a waveguide, wherein the semiconductor laser element further comprises:
- a light-emitting point alignment mark partly overlapping an intersection line defined by the intersection of an electrode surface of the semiconductor laser element with a plane which includes the waveguide, the plane of the waveguide being perpendicular to the electrode surface;
- said light-emitting point alignment mark having a length in a width direction of the semiconductor laser element of not more than 20 μm;
- and
- a visually recognizable direction indicating mark provided on the electrode surface.
Dependencies are inferred from the claim text.