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US 6,611,474 B2Granted
Semiconductor device
AssigneeHitachi, Ltd.
InventorsSatoru Hanzawa, Takeshi Sakata
Life of this patent
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Abstract
A semiconductor device to output voltages at three levels to a word driver while alleviating the breakdown voltage in the MOS transistor. This invention is comprised of a breakdown-voltage reducing MOS transistor inserted in the word driver and two NMOS transistors to supply a read-out voltage to a word line. The word driver is moreover controlled by different voltage amplitudes on the main word lines and the common word lines.
Claims5
A semiconductor device comprising:
- a plurality of word lines;
- a plurality of data lines intersecting with said plurality of word lines;
- a plurality of memory cells installed at desired cross points of said plurality of data lines and said plurality of word lines;
- and
- a plurality of word drivers installed to correspond to each of said plurality of word lines;
- and
- each of the plurality of word drivers having;
- a first MOSFET of a first conduction type supplied with a first voltage at one of the source and the drain in a first period and a third voltage in a second period;
- a first MOSFET of a second conduction type supplied with a second voltage at one of the source and the drain;
- and
- a second MOSFET of said second conduction type having a period for supply of said second voltage at one of the source and the drain,
- wherein each of said plurality of word drivers outputs any one voltage selected from among said first voltage, said second voltage or said third voltage to a corresponding word line.
9 more elements
Dependencies are inferred from the claim text.