US 6,611,459 B2 · Non-volatile semiconductor memory device

Abstract

A non-volatile semiconductor memory device usable in relatively wide applications and a method of manufacturing the same are provided. A NOR-type flash memory region (2) including a NOR-type memory cell transistor and a DINOR-type flash memory region (3) including a DINOR-type memory cell transistor are manufactured into a single semiconductor chip (1). A peripheral circuit region (7) including a transistor for a peripheral circuit or the like is manufactured into a region surrounding the NOR-type flash memory region (2) and the DINOR-type flash memory region (3). The peripheral circuit region (7) is shareable between the NOR-type flash memory region (2) and the DINOR-type flash memory region (3) by electrical connection to both of the regions.

Claims6

Dependent claims

A non-volatile semiconductor memory device comprising:

a semiconductor substrate;
a first non-volatile memory cell region manufactured into said semiconductor substrate and capable of non-volatile storage, said first non-volatile memory cell region including a first memory cell transistor having a first operating characteristic in reading, writing and erase operations;
and
a second non-volatile memory cell region manufactured into said semiconductor substrate and capable of non-volatile storage, said second non-volatile memory cell region including a second memory cell transistor having a second operating characteristic different from said first operating characteristic in one of reading, writing and erase operations.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

10/164,625Filed 10 Jun 2002

Priority

JP 2002-0003227 Jan 2002

Published

US 2003/0128584 A110 Jul 2003

Granted

26 Aug 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10B 41/40
Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates: characterised by the peripheral circuit region
G11C 16/0416
Comprising cells containing floating gate transistors: comprising cells containing a single floating gate transistor and no select transistor,…
H10B 41/48
Comprising only one type of peripheral transistor: with a tunnel dielectric layer also being used as part of the peripheral transistor
G11C 11/005
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor: comprising combined but…

Non-volatile semiconductor memory device

Life of this patent

Non-volatile semiconductor memory device

Life of this patent

Abstract

Claims6