US 6,611,455 B2 · Magnetic memory

Abstract

A solid-state magnetic memory includes: a substrate; a plurality of memory cells arrayed in a matrix on the substrate, each memory cell including a memory element and an element-selecting device, the memory element including two magnetic layers and a nonmagnetic layer sandwiched between the magnetic layers, the easy magnetization axis of each magnetic layer being directed perpendicular to the plane of the layer; a plurality of bit lines connected to the memory elements for reading out data recorded in the memory elements; and a plurality of write lines placed substantially in the same plane so as to sandwich the memory cell columns, at least one end of each write line being joined to one end of another write line so that a current flows in opposite directions at both sides of each memory cell column.

Claims22

Dependent claims

A solid-state magnetic memory comprising:

a substrate;
a plurality of memory cells arrayed in a matrix on the substrate, each memory cell comprising a memory element and an element-selecting device, the memory element comprising two magnetic layers and a nonmagnetic layer sandwiched between the magnetic layers, the easy magnetization axis of each magnetic layer being directed perpendicular to the plane of the layer;
a plurality of bit lines connected to the memory elements for reading out data recorded in the memory elements;
and
a plurality of write lines placed substantially in the same plane, at least one end of each write line being joined to one end of another write line so that a current flows in opposite directions at both sides of the memory cell column.

2 more elements

A solid-state magnetic memory comprising a plurality of memory cells arrayed in a matrix, each memory cell comprising a memory element comprising a magnetoresistive element and an element-selecting device, the magnetoresistive element comprising two magnetic layers and a nonmagnetic layer sandwiched between the magnetic layers, the easy magnetization axis of each magnetic layer being directed perpendicular to the plane of the layer,

wherein write lines shared by two adjacent memory element columns are placed, both ends of the shared write lines being joined to the ends of other write lines so that a current flows with two memory element columns therebetween, the other ends of the other write lines being joined to a current supply circuit, and thereby a pair of adjacent memory elements placed at both sides of the shared write line are complementarily operated.

Dependencies are inferred from the claim text.

Magnetic memory

Life of this patent

Magnetic memory

Life of this patent

Abstract

Claims22