Self-aligned cross-point MRAM device with aluminum metallization layers
AssigneeInfineon Technologies AG
InventorXian J. Ning
Life of this patent
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Abstract
An MRAM device (160) and manufacturing process thereof having aluminum conductive lines (134) and (152), with self-aligning cross-points. Conductive lines (134) and metal stack (138) are patterned in a single patterning step and etched. Conductive lines (152) positioned orthogonally to conductive lines (134) are patterned simultaneously with the patterning of metal stack (138) and are etched. The metal stack (138) serves as an anti-reflective coating for conductive lines (152) during the etching process. A multi-level MRAM device may be manufactured in accordance with an embodiment of the invention.
Claims11
A method of manufacturing a magnetic random access memory (MRAM) device, comprising:
- providing a workpiece;
- depositing a first metallization layer over the workpiece;
- depositing a first magnetic stack over the first metallization layer;
- patterning and etching the first magnetic stack and first metallization layer to form first conductive lines;
- depositing a first dielectric layer over the first conductive lines;
- depositing a second metallization layer over the first conductive lines and first dielectric layer;
- and
- patterning and etching the second metallization layer and the first magnetic stack to form second conductive lines orthogonal to the first conductive lines, and leave portions of the first magnetic stack between cross-points of the first and second conductive lines.
Dependencies are inferred from the claim text.